amplifiers and high energy pulse circuits. Part Number. IRF IRF N.I Semi-Conductors encourages customers to verify that datasheets are current. IRF datasheet, IRF pdf, IRF data sheet, datasheet, data sheet, pdf, Fairchild Semiconductor, A, V, Ohm, N-Channel Power MOSFET. IRF A, V, Ohm, N-channel Power MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power.

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Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Such statements are not binding statements about the suitability of products for a particular application. Gate-to-Source Voltage Document Number: The low thermal resistance datahseet low package cost of the TOAB contribute to its wide acceptance throughout the industry.


Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations.

IRF Datasheet(PDF) – Vishay Siliconix

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C, Dec 0 10 5 Ciss Fig. Vishay makes no warranty, datasueet or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.


Repetitive rating; pulse width limited by maximum junction temperature see fig. For example, parts with lead Pb terminations are not RoHS-compliant. The TOAB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

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